Hydrogen Ion Drift into Underlying Oxides by RF Bias during High-Density Plasma Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
High-density plasma chemical vapor deposition (HDP-CVD) is a deposition method of current interest for the gap-filling process of the intermetal dielectric (IMD) in semiconductor circuits. We first demonstrated that hydrogen ions drift into underlying thermal oxides during HDP-CVD with a SiH4–O2–Ar system, and that they degrade the reliability of gate oxides. The characteristics of the oxides were investigated using secondary ion mass spectroscopy (SIMS), thermal desorption spectroscopy (TDS), and capacitance–voltage ($C$–$V$) measurements of metal–oxide–semiconductor (MOS) capacitors. The hydrogen ions that are dissociated from SiH4 in plasma penetrate into the HDP-CVD oxides, and some of the hydrogen ions in the HDP-CVD oxides drift into the underlying thermal oxides by rf bias. The drifting hydrogen creates two chemical bonding states and generates hole trap sites in the underlying thermal oxides.
- 2005-11-15
著者
-
Asai Koyu
Process Development Department Process Technology Development Division Production And Technology Uni
-
Sawada Mahito
Process Development Department Process Technology Development Division Production And Technology Uni
-
Yoneda Masahiro
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
-
Kobayashi Kiyoteru
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
-
Asai Koyu
Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Yamaguchi Tadashi
Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
YONEDA Masahiro
Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corporation
-
Sawada Mahito
Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Kobayashi Kiyoteru
Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Yoneda Masahiro
Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
関連論文
- Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
- Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs
- A New Divided Deposition Method of TiN Thin Films for MIM Capacitor Applications
- Investigation of the Divided Deposition Method of TiN Thin Films for Metal–Insulator–Metal Capacitor Applications
- Diffusion Control Techniques for TiN Stacked Metal Gate Electrodes for p-Type Metal Insulator Semiconductor Field Effect Transistors
- Highly Reliable Cu Interconnect Using Low-Hydrogen Silicon Nitride Film Deposited at Low Temperature as Cu-Diffusion Barrier
- Effect of NH3-Free Silicon Nitride for Protection Layer of Magnetic Tunnel Junction on Magnetic Properties of Magnetoresistive Random Access Memory
- Effect of N2 Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH4–NH3–N2–He Gas Mixture on Stress Relaxation of Silicon Nitride
- Novel Contact-Plug Process with Low-Resistance Nucleation Layer Using Diborane-Reduction Tungsten Atomic-Layer-Deposition Method for 32 nm Complementary Metal–Oxide–Semiconductor Devices and Beyond
- Hydrogen Ion Drift into Underlying Oxides by RF Bias during High-Density Plasma Chemical Vapor Deposition
- Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices
- Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond