Yoneda Masahiro | Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

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著作論文

Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs
A New Divided Deposition Method of TiN Thin Films for MIM Capacitor Applications
Investigation of the Divided Deposition Method of TiN Thin Films for Metal–Insulator–Metal Capacitor Applications
Diffusion Control Techniques for TiN Stacked Metal Gate Electrodes for p-Type Metal Insulator Semiconductor Field Effect Transistors
Hydrogen Ion Drift into Underlying Oxides by RF Bias during High-Density Plasma Chemical Vapor Deposition
Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices

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