Matsuura Masazumi | Process Technology Development Division Renesas Technology Corp.

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著作論文

Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
Highly Reliable Cu Interconnect Using Low-Hydrogen Silicon Nitride Film Deposited at Low Temperature as Cu-Diffusion Barrier
Effect of NH3-Free Silicon Nitride for Protection Layer of Magnetic Tunnel Junction on Magnetic Properties of Magnetoresistive Random Access Memory
Effect of N2 Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH4–NH3–N2–He Gas Mixture on Stress Relaxation of Silicon Nitride
Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices

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