YONEDA Masahiro | Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corporation

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著作論文

Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs
A New Divided Deposition Method of TiN Thin Films for MIM Capacitor Applications
Diffusion Control Techniques for TiN Stacked Metal Gate Electrodes for p-Type Metal Insulator Semiconductor Field Effect Transistors
Hydrogen Ion Drift into Underlying Oxides by RF Bias during High-Density Plasma Chemical Vapor Deposition
Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices

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