A New Divided Deposition Method of TiN Thin Films for MIM Capacitor Applications
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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MORI Kenichi
Process Technology Development Division Renesas Technology Corporation
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YONEDA Masahiro
Process Technology Development Division, Renesas Technology Corp.
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Okudaira Tomonori
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
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Mori Kenichi
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
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SAKASHITA Shinsuke
Process Development Dept., Process Technology Development Div., Production and Technology Unit, Rene
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HAYASHI Takeshi
Process Development Dept., Process Technology Development Div., Production and Technology Unit, Rene
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WAKAO Kazutoshi
Process Development Dept., Process Technology Development Div., Production and Technology Unit, Rene
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TSUCHIMOTO Junichi
Process Development Dept., Process Technology Development Div., Production and Technology Unit, Rene
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KOBAYASHI Kiyoteru
Process Development Dept., Process Technology Development Div., Production and Technology Unit, Rene
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Wakao Kazutoshi
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
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Tsuchimoto Junichi
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
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Sakashita Shinsuke
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
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Sakashita Shinsuke
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
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Yoneda Masahiro
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
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Yoneda Masahiro
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
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Kobayashi Kiyoteru
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
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Hayashi Takeshi
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
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Okudaira Tomonori
Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corporation
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Sakashita Shinsuke
Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corporation
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YONEDA Masahiro
Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corporation
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TSUCHIMOTO Junichi
Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corporation
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Kobayashi Kiyoteru
Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Yoneda Masahiro
Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Hayashi Takeshi
Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corporation
関連論文
- Effects of Dielectric-Layer Composition on Growth of Self-Formed Ti-Rich Barrier Layers in Cu(1at% Ti)/Low-k Samples
- Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
- Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs
- A New Divided Deposition Method of TiN Thin Films for MIM Capacitor Applications
- Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45nm Node Devices and Beyond
- Structure Analyses of Ti-Based Self-Formed Barrier Layers
- Investigation of the Divided Deposition Method of TiN Thin Films for Metal–Insulator–Metal Capacitor Applications
- Diffusion Control Techniques for TiN Stacked Metal Gate Electrodes for p-Type Metal Insulator Semiconductor Field Effect Transistors
- Hydrogen Ion Drift into Underlying Oxides by RF Bias during High-Density Plasma Chemical Vapor Deposition
- Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices
- Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond