Structure Analyses of Ti-Based Self-Formed Barrier Layers
スポンサーリンク
概要
- 論文の詳細を見る
Self-formed Ti-based barrier layer using Cu(Ti) alloy seed applied to 45-nm-node dual-damascene interconnects was reported to have sufficient barrier strength to prevent Cu diffusion into dielectrics. The constituent Ti compounds in the self-formed Ti-based barrier layers and the barrier structures in Cu(Ti)/dielectric samples were identified by X-ray photoelectron spectroscopy (XPS) analyses. Two types of SiOC with low dielectric constants, SiO2, and SiCN were used as dielectrics. The Ti-based barrier layers consisted mainly of amorphous Ti oxides such as TiO2, Ti2O3, and TiO, regardless of the dielectric. In addition to Ti oxides, barrier layers containing TiC, TiSi, and TiN were observed, depending on the dielectric. TiC and TiSi were in crystalline state. They were formed beneath the Cu(Ti) alloy films, and had orientation relationship with the crystalline Cu(Ti) alloy films. The amorphous Ti oxides were formed above the amorphous dielectric layers. The amorphous Ti oxides are believed to be formed continuously above the dielectric layers and prevent Cu diffusion into the dielectric layers.
- 2011-04-25
著者
-
MURAKAMI Masanori
The Ritsumeikan Trust
-
MAEKAWA Kazuyoshi
Process Technology Development Division Renesas Technology Corporation
-
Shirai Yasuharu
Department Of Materials Science And Engineering Kyoto University
-
Mori Kenichi
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
-
Ito Kazuhiro
Department Of Cardiovascular And Thoracic Surgery Kyoto Prefectural University Of Medicine
-
Kohama Kazuyuki
Department Of Materials Science And Engineering Kyoto University
-
Sonobayashi Yutaka
Department Of Material Science And Engineering Kyoto University
-
Maekawa Kazuyoshi
Process Technology Development Division, Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
-
Ohmori Kazuyuki
Process Technology Development Division, Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
-
Mori Kenichi
Process Technology Development Division, Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
関連論文
- 29pRB-1 水素化・不均化されたNd-Fe-B系合金の脱水素・再結合過程における陽電子寿命変化(29pRB 格子欠陥・ナノ構造(金属・陽電子・水素・炭素),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- 水素化・不均化したNd-Fe-B系合金の脱水素・再結合過程に伴う組織変化と陽電子寿命
- Nd-Fe-Co-B系合金のHDDRプロセスにおけるDR処理に伴う組織変化と保磁力
- Growth and Microstructure of Epitaxial Ti3SiC2 Contact Layers on SiC
- Treatment of Metastatic Brain Tumor from Esophageal Carcinoma : Report of Four Cases
- Detection of Neodymium-Rich Phase for Development of Coercivity in Neodymium-Iron-Boron-Based Alloys with Submicron-Sized Grains Using Positron Lifetime Spectroscopy
- 28pYK-5 低速陽電子ビームによる配線用Cu合金薄眼中の格子欠陥の同定(X線・粒子線(陽電子),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- 26aYJ-4 ペロブスカイト型酸化物SrZrO_およびBaZrO_の構造欠陥(誘電体(ペロブスカイト),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- 水素吸蔵合金LaNi5に存在する格子欠陥--陽電子消滅法と第一原理計算による分析・評価 (特集 陽電子消滅法による材料研究の進歩)
- 23pVE-11 ペロブスカイト型酸化物BaZrO_,SrZrO_の陽電子寿命と欠陥構造(23pVE 格子欠陥・ナノ構造(光物性・微粒子・水素・陽電子),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- 23pVE-7 LaNi_5の水素化過程における空孔の安定性に関する第一原理計算(23pVE 格子欠陥・ナノ構造(光物性・微粒子・水素・陽電子),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- 22pWA-6 金ナノ結晶の結晶粒界層の相転移(22pWA 格子欠陥・ナノ構造(電子状態・表面界面・転位・面欠陥),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- 23aYF-5 鉄中の炭化クロム析出物による陽電子捕獲と水素トラッピング(格子欠陥・ナノ構造(水素),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- 23aYF-6 遷移金属炭化物の水素トラップ能に関する第一原理計算(格子欠陥・ナノ構造(水素),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- 電子によるサブナノスケール欠陥の検出
- Anomalous Transport and Thermal Properties of YInCu_4
- Resistivity Reduction and Adhesion Increase Induced by Surface and Interface Segregation of Ti Atoms in Cu(Ti) Alloy Films on Glass Substrates
- Effects of Dielectric-Layer Composition on Growth of Self-Formed Ti-Rich Barrier Layers in Cu(1at% Ti)/Low-k Samples
- Self-Formation of Ti-rich Interfacial Layers in Cu(Ti) Alloy Films
- Grain Growth Mechanism of Cu Thin Films
- 23pWZ-5 AuCdの熱弾性マルテンサイト変態に伴う欠陥構造の変化(23pWZ 格子欠陥・ナノ構造(金属,点欠陥,シュミレーション),領域10(誘電体格子欠陥,X線・粒子線フォノン))
- 23pWZ-4 NiTi合金の熱弾性型マルテンサイト変態前駆現象のミュオンによる研究(23pWZ 格子欠陥・ナノ構造(金属,点欠陥,シュミレーション),領域10(誘電体格子欠陥,X線・粒子線フォノン))
- 23pWZ-8 陽電子消滅法を用いたペロブスカイト型酸化物PbTiO_の構造欠陥評価(23pWZ 格子欠陥・ナノ構造(金属,点欠陥,シュミレーション),領域10(誘電体格子欠陥,X線・粒子線フォノン))
- 領域10「エキゾチック粒子で探る物質ナノ構造と物性」(第62回年次大会シンポジウムの報告)
- Relationship between Coercivity and Microstructural Changes During DR Treatment in the HDDR-processed Nd-Fe-Co-B Alloy
- 2P-330 青色蛍光シリコンナノクリスタルによる生物医学的な実験および診断(バイオイメージング(1),第46回日本生物物理学会年会)
- 23pWZ-7 金ナノ結晶の異常格子収縮と空孔濃度温度変化(23pWZ 格子欠陥・ナノ構造(金属,点欠陥,シュミレーション),領域10(誘電体格子欠陥,X線・粒子線フォノン))
- Fermi Surface of a Shape Memory Alloy of TiNi(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Lymphocytic Adenohypophysitis with Sudden Onset of Diabetes Insipidus in Menopausal Female : Case Report
- Excess Vacancies Induced by Disorder-Order Phase Transformation in Ni_3Fe
- Lung Metastasis of Thymoma Manifesting as Myasthenia Gravis 12 Years After Thymomectomy : Report of a Case
- Acute Arterial Thrombosis with Antithrombin III Deficiency in Nephrotic Syndrome: Report of a Case
- Magnetic navigation system for thoracoscopic surgery: a partial lung resection with transbronchial marking (特集 先進医療に向けたマイクロ技術)
- Extrapericardial Pulmonary Vein Clamp Technique for Pulmonary Arteriovenous Fistula : Report of a Case
- Protective Effect of N-methyl-l-deoxynojirimycin on Lung Ischemia Reperfusion Injury : An in vivo Study : MdNM Reduces Lung Ischemia Reperfusion Injury
- Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs
- A New Divided Deposition Method of TiN Thin Films for MIM Capacitor Applications
- Structure and chemistry of planar defects in bulk and thin film MoSi_2
- Lattice Defect Behavior of LaNi_Sn_ during Hydrogenation Cycles
- Structure Analyses of Ti-Based Self-Formed Barrier Layers
- Growth of Ti-Based Interface Layer in Cu(Ti)/Glass Samples
- Diffusion Control Techniques for TiN Stacked Metal Gate Electrodes for p-Type Metal Insulator Semiconductor Field Effect Transistors
- Fatigue Evaluation of Type 316 Stainless Steel Using Positron Annihilation Lineshape Analysis and β^+-γ Coincidence Positron Lifetime Measurement
- Hydrogen-Induced Vacancy Generation Phenomenon in Pure Pd
- Recovery of Hydrogen Induced Defects and Thermal Desorption of Residual Hydrogen in LaNi_5
- Positron Lifetime Study of Defect Structures in B2 Ordered Co-Al Alloys
- Anomalous Temperature Changes of Positron Lifetime and Electrical Resistivity in B2-NiTi Alloys
- Theoretical Calculation of Positron Lifetimes in CoAl and CoTi
- Effects of Pore Sealing on Self-Formation of Ti-Rich Barrier Layers in Cu(Ti)/Porous-Low-$k$ Samples
- Novel Contact-Plug Process with Low-Resistance Nucleation Layer Using Diborane-Reduction Tungsten Atomic-Layer-Deposition Method for 32 nm Complementary Metal–Oxide–Semiconductor Devices and Beyond
- 陽電子消滅法によるアルミニウム合金中の原子空孔挙動観察
- Oxygen-Induced Barrier Failure in Ti-Based Self-Formed and Ta/TaN Barriers for Cu Interconnects
- Effect of Hydrogen on Vacancy Formation in Sputtered Cu Films Studied by Positron Annihilation Spectroscopy
- Self-Formation of Ti-rich Interfacial Layers in Cu(Ti) Alloy Films
- Off-pump Coronary Artery Bypass Grafting in a Patient with Chronic Myelomonocytic Leukemia
- Effect of Hydrogen on Vacancy Formation in Sputtered Cu Films Studied by Positron Annihilation Spectroscopy