Novel Contact-Plug Process with Low-Resistance Nucleation Layer Using Diborane-Reduction Tungsten Atomic-Layer-Deposition Method for 32 nm Complementary Metal–Oxide–Semiconductor Devices and Beyond
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概要
- 論文の詳細を見る
The effect of employing diborane (B2H6) instead of silane (SiH4) in a tungsten (W) atomic layer deposition (ALD) nucleation layer on contact resistance is studied. A low resistance of 50–70 $\Omega$ in a 32-nm-node contact with a diameter of about 50 nm is achieved with optimized barrier and nucleation processes. This result indicates that the resistance required for 32 nm complementary metal–oxide–semiconductor (CMOS) devices can successfully be satisfied without employing a copper plug process. It is revealed that a W film with a B2H6-reduced nucleation layer has a larger grain size and a lower fluorine concentration in nucleation W and barrier metal layers, resulting in a lower resistivity than that with a SiH4-reduced nucleation W layer. On the other hand, the B2H6-reduced nucleation process still shows a poorer crystallization and a higher fluorine concentration in the filling W layer than the SiH4-reduced nucleation process. We revealed that a further decrease in the resistivity of a W film with the B2H6 nucleation process is achieved by improving these issues.
- 2008-04-25
著者
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MAEKAWA Kazuyoshi
Process Technology Development Division Renesas Technology Corporation
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Asai Koyu
Process Development Department Process Technology Development Division Production And Technology Uni
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Asai Koyu
Process Technology Development Division, Renesas Technology Corporation, Itami, Hyogo 664-0005, Japan
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Yutani Akie
Process Technology Development Division, Renesas Technology Corporation, Itami, Hyogo 664-0005, Japan
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Ichinose Kazuhito
Process Technology Development Division, Renesas Technology Corporation, Itami, Hyogo 664-0005, Japan
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Kojima Masayuki
Process Technology Development Division, Renesas Technology Corporation, Itami, Hyogo 664-0005, Japan
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Kojima Masayuki
Process Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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