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Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation | 論文
- Reliable High-k TiO_2 Gate Insulator Formed by Ultrathin TiN Deposition and Low Temperature Oxidation
- Novel Elevated Source/Drain Technology for FinFET Overcoming Agglomeration and Facet Problems Utilizing Solid Phase Epitaxy
- Retarding Mechanism of Si Selective Epitaxial Growth on CMOS Structure due to Doped Arsenic in the Si Substrate
- Influence of Reactive Ion Etching Applied to Si Substrate on Epitaxial Si Growth and Its Removal
- Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow Shallow Trench Isolation
- Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow STI
- Highly Uniform Deposition of LP-CVD 3i3N4 Films on Tungsten for Advanced Low Resistivity "Poly-Metal" Gate Interconnects
- Accuracy of Overlay Metrology with Nonp-enetrating and Negative-Charging Electron Beam of the Scanning Electron Microscope
- Application of Electron Beam Cured Spin-On Glass to Trilevel Resist System for Deep and Vacuum Ultraviolet Lithography
- Resist and Sidewall Film Rermoval after AT Reactive Ion Etching (RIE) Employing F+H_2O Downstream Ashing
- Influence of Al Surface Modification on Selectivity in Via-Hole Etching Employing CHF_3 Plasma
- Ballistic Spin Transport in Four-Terminal NiFe/In_Ga_As Structure : Semiconductors
- Charge Trapping Sites in Spherulitic Polypropylene
- SiO_2 Tapered Etching Employing Magnetron Discharge of Fluorocarbon Gas
- Sub-45 nm SiO2 Etching with Stacked-Mask Process Using High-Bias-Frequency Dual-Frequency-Superimposed RF Capacitively Coupled Plasma
- Highly Selective Si3N4/SiOC Etching Using Dual Frequency Superimposed RF Capacitively Coupled Plasma
- Dual-Frequency Superimposed RF Capacitive-Coupled Plasma Etch Process
- Organic Film Reactive Ion Etching Using 100 MHz rf Capacitive Coupled Plasma
- Characteristics of(Ba, Sr)TiO_3 Capacitors with Textured Ru Bottom Electrode
- Hole Generation without Annealing in High Dose Boron Implanted Silicon : Heavy Doping by B_ Icosahedron as a Double Acceptor