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Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation | 論文
- Effects of Cleavage on Local Cross-Sectional Stress Distribution in Trench Isolation Structure
- Effects of Cleavage on Local Cross-Sectional Stress Distribution in Trench Isolation Structure
- Single-Beam Overwrite with a New Erase Mode of In_3 SbTe_2 Phase-Change Optical Disks : Media
- Single-Beam Overwrite with a New Erase Mode of In_3SbTe_2 Phase-Change Optical Disks
- Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region
- 300-kilo-Gate Sea-of-Gate Type Gate Arrays Fabricated Using 0.25-μm-Gate Ultra-Thin-Film Fully-Depleted Complementary Metal-Oxide-Semiconductor Separation by IMplanted OXygen (CMOS/SIMOX) Technology with Tungsten-Covered Source and Drain
- Properties of Full-Color Fluorescent Display Devices Excited by a UV Light-Emitting Diode
- Full-Color Fluorescent Display Devices Using a Near-UV Light-Emitting Diode
- Crystallizing Mechanism and Recording Properties of In_3SbTe_2 Phase-Change Optical Disks
- Brillouin Spectra and Structural Relaxation in ZnCl_2-KCl Binary Melts
- 2.5 Inch Flat-Type Phase-Change Optical Disk Drive
- Low-Standby-Power Complementary Metal-Oxide-Semiconductor Transistors with TiN Single Gate on 1.8 nm Gate Oxide
- Diffusion and Segregation of Carbon in SiO_2 Films
- Novel Pb(Ti,Zr)O_3(PZT) Crystallization Technique Using Flash Lamp for Ferroelectric RAM (FeRAM) Embedded LSIs and One Transistor Type FeRAM Devices
- Novel PZT Crystallization Technique by Using Flash Lamp for FeRAM Embedded LSIs and 1Tr FeRAM Devices
- Mechanism of Defect Formation during Low-Temperature Si Epitaxy on Clean Si Substrate
- Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping (VPD)
- Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping
- Reduction in PN Junction Leakage for Ni-silicided Small Si Islands by Using Thermal Conduction Heating with Stacked Hot Plates
- Low Leakage TiO_2 Gate Insulator Formed by Ultrathin TiN Deposition and Low-Temperature Oxidation