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National Nano Device Laboratory | 論文
- Low-Pressure Crystallization of Sol-Gel-Derived PbZr_Ti_O_3 Thin Films at Low Temperature for Low-Voltage Operation
- Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
- Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
- Reduction of Off-State Leakage Current in Schottky Barrier Thin-Film Transistors (SBTFT) by a Field-Induced Drain
- Enhanced Negative-Bias-Temperature Instability of P-Channel Metal-Oxide-Semiconductor Transistors due to Plasma Charging Damage
- Conduction Mechanisms for Off-State Leakage Current of Schottky Barrier Thin-Film Transistors (SBTFT)
- Post-Soft-Breakdown Characteristics of Deep Sub-Micron NMOSFETs with Ultra-Thin Gate Oxide
- Enhanced Negative-Bias-Temperature Instability of P-Channel MOSFET by Plasma Charging Damage
- Separation and Study of the Optical Properties of Silver Nanocubes by Capillary Electrophoresis
- A Multilevel Interconnect Technology with Intrametal Air Gap for High-Performance 0.25-μm-and-Beyond Devices Manufacturing
- Rugged Surface Polycrystalline Silicon Film Formed by Rapid Thermal Chemical Vapor Deposition for Dynamic Random Access Memory Stacked Capacitor Application
- Measurement of Thin Oxide Films on Implanted Si-Substrate by Ellipsometry
- The δ-Doped In_Ga_As/GaAs Pseudomorphic High Electron Mobility Transistor Structures Prepared by Low-Pressure Metal Organic Chemical Vapor Deposition
- The Doped Quantum Well Gate FET Fabricated by Low-Pressure MOCVD : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Suppression of Boron Penetration in BF^+_2-Implanted Poly-Si Gate
- Suppression of Boron Penetration in P^+-Poly-Si Gate Metal-Oxide-Semiconductor Transistor Using Nitrogen Implantation
- Mechanism and Optimization of Nitrogen Co-Implant for Suppressing Boron Penetration in P^+-Poly-Si Gate of PMOSFET's
- Improving Electrical Properties and Thermal Stability of (Ba,Sr)TiO_3 Thin Films on Cu(Mg) Bottom Electrodes
- Ellipsometric Measurements and its Alignment : Using the Intensity Ratio Technique
- Strained Si_Ge_x Normal-Graded Channel P-Type Metal Oxide Semiconductor Field Effect Transistor