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National Nano Device Laboratory | 論文
- Electrical Characteristics of Thin HfO_2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
- Effectiveness of NH_3 Plasma Treatment in Preventing Wet Stripper Damage to Low-K Hydrogen Silsesquioxane (HSQ) : Semiconductors
- Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of LOW-k Hydrogen Silisesquioxane
- Enhancement of Barrier Properties in Chemical Vapor Deposited TiN Employing Multi-Stacked Ti/TiN Structure
- Effectively Blocking Copper Diffusion at Low-k Hydrogen Silsesquioxane/Copper Interface
- Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H_2 Plasma Treatment
- Optical and Electrical Characteristics of CO_2-Laser-Treated Mg-Doped GaN Film
- Electrical Properties of Multiple High-Dose Si Implantation in p-GaN
- Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition
- The Polarity Dependence of Soft-Breakdown Characterization for Ultra-Thin Gate Oxides Affected by Nitrogen and Fluorine
- Improvement of Reliability of MOSFET's with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
- Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
- Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
- The Effects of Low-Pressure Rapid Thermal Post-Annealing on the Properties of (Ba, Sr)TiO_3 Thin Films Deposited by Liquid Source Misted Chemical Deposition : Instrumentation, Measurement, and Fabrication Technology
- High Carrier Density and Mobility in GaAs/InGaAs/GaAs Double Delta-Doped Channels Heterostructures
- MBE Grown Undoped Superlattice Gate and Modulation-Doped Buffer Structure for Power FET Applications
- Preparation of Silver Nanorods by Rapid Microwave Heating
- Thermal Flow and Chemical Shrink Techniques for Sub-100 nm Contact Hole Fabrication in Electron Beam Lithography
- Reduction Substrate Alkaline Contamination by Utilizing Multi-Layer Bottom Antireflective Coating Structures in ArF Lithography
- Low Dielectric Constant Polymer Materials as Bottom Antirefiective Coating Layers for both KrF and ArF Lithography