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Mitsubishi Electric Corp. Itami‐shi Jpn | 論文
- Preparation of New Nitrogen-Bridged Heterocycles. 60. Syntheses and Conformational Analyses of Bis(indolizin-1-yl) Disulfides
- Novel 1470-nm-Band WDM Transmission and Its Application to Ultra-Wide-Band WDM Transmission (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Novel 1470-nm-Band WDM Transmission and Its Application to Ultra-Wide-Band WDM Transmission (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Partially Depleted SOI Technology with Body-Tied Hybrid Trench Isolation for High-Speed System-On-a-Chip Application(Special Issue on Integrated Systems with New Concepts)
- A Sub 1-V L-Band Low Noise Amplifier SOI CMOS(Special Section on Analog Circuit Techniques and Related Topics)
- A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- Analysis of the Delay Distributions of 0.5μm SOI LSIs (Special Issue on SOI Devices and Their Process Technologies)
- Novel VLIW Code Compaction Method for a 3D Geometry Processor
- A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs
- A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching
- An Ultra Low Noise 50-GHz-Band Amplifier MMIC Using an AlGaAs/InGaAs Pseudomorphic HEMT
- A Wide Range 1.0-3.6 V 200 Mbps, Push-Pull Output Buffer Using Parasitic Bipolar Transistors(Low-Power System LSI, IP and Related Technologies)
- Signal Integrity Design and Analysis for a 400 MHz RISC Microcontroller
- A Low Standby Current DSP Core Using Improved ABC-MT-CMOS with Charge Pump Circuit
- Time-Dependent Leakage Current Behavior of Integrated Ba_Sr_TiO_3 Thin Film Capacitors during Stressing
- Temperature-Dependent Current-Voltage Characteristics of Fully Processed Ba_Sr_TiO_3 Capacitors Integrated in a Silicon Device
- Si LSI Process Technology for Integrating Ferroelectric Capacitors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Application of Ferroelectric Thin Films to Si Devices (Special Issue on Quarter Micron Si Device and Process Technologies)
- A Digital Neural Network Coprocessor with a Dynamically Reconfigurable Pipeline Architecture (Special Issue on New Architecture LSIs)
- 招待講演 A 65nm embedded SRAM with wafer level burn-in mode, leak-bit redundancy and E-trim fuse for known good die (集積回路)