スポンサーリンク
Mitsubishi Electric Corp. Hyogo Jpn | 論文
- Characterization of Stable Fluorine-Doped Silicon Oxide Film Prepared by Biased Helicon Plasma Chemical Vapor Deposition
- Step-Promoted Surface Reconstruction on Ga-Deposited (100) GaAs During Molecular Beam Epitaxy with Alternating Supply of Ga and As
- Room-Temperature Self-Electrooptic Effects of GaAs/AlAs Asymmetric Coupled Quantum Wells
- Photoluminescence of a Novel Hetero n-i-p-i Structure Incorporating Triple Quantum Wells
- Thermal Stability of Interconnect of TiN/Cu/TiN Multilayered Structure
- A New Mechanism of Failure in Silicon p^+/n Junction Induced by Diffusion Barrier Metals
- CPM2000-82 (001)Si上(111)Cu/(111)HfN/(002)Hf三層膜の連続単配向成長に及ぼすHf膜厚の影響
- Al_3Zr金属間化合物膜の陽極酸化とそれを応用した高信頼性薄膜キャパシタの作製
- Alメタライゼーション系へのAl_3Hf/Hf積層膜の拡散バリヤとしての適用
- Al_3Hf金属間化合物膜の結晶化過程と電気的特性
- n-(001)Si上への単配向Hf膜の作製条件の検討
- 反応性スパッタリング法によるRuO_2薄膜の作製とその電気特性
- Al-Si間におけるAl_3Zr/Zr積層膜の拡散バリヤ効果について
- Zn-Diffusion-Induced Disordering of InGaAs/AlGaInAs Multiple Quantum Well and Its Application to Long-Wavelength Laser
- Long-Wavelength Receiver Optoelectronic Integrated Circuit on 3-Inch-Diameter GaAs Substrate Grown by InP-on-GaAs Heteroepitaxy
- Study on Preparation Conditions of High-Quality ZrN Thin Films Using a Low-Temperature Process
- Preparation of Oxygern-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization
- Formation Process and Electrical Property of RuO_2 Thin Films Prepared by Reactive Sputtering
- Initial Silicide Formation Process of Single Oriented (002) Hf Film on Si and Its Diffusion Barrier Property
- A Study on the Preparation Conditions of Single Oriented (002) Hf Film on n-(001) Si