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Mitsubishi Electric Corp. Hyogo Jpn | 論文
- Elimination of X-Ray Photoelectron Diffraction Effect of Si(100) for Accurate Determination of SiO_2 Overlayer Thickness
- Kikuchi-Band Analysis of X-Ray Photoelectron Diffraction Fine Structure of Si(100) by Precise Angle-Resolved X-Ray Photoelectron Spectroscopy
- Aiming for SIS Mixers Using Ba_<1-x>K_xBiO_3 Bicrystal Junctions (Special Issue on Basic Properties and Applications of Superconductive Electron Devices)
- High-temperature X-Ray Diffraction Measurements of ZnO Varistor Ceramics
- Effects of Contents of Bi_2O_3 and Sb_2O_3 on Lattice Parameters of Phases of ZnO Varistor Ceramics
- A New Broadband Buffer Circuit Technique and Its Application to a 10-Gbit/s Decision Circuit Using Production-Level 0.5μm GaAs MESFETs
- Test Structure for the Evaluation of Si Substrates (Special Issue on Microelectronic Test Structure)
- Surface Defect Formation in Epitaxial Si Grown on Boron-Doped Substrates by Ultrahigh Vacuum Chemical Vapor Deposition(Structure and Mechanical and Thermal Properties of Condensed Matter)
- Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition
- Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
- Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
- Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors
- Narrow-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET)Isolated by an Ultra-Fine Trench
- Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling Process
- In_Ga_AS/InAlGaAs/InGaP Strained Double Quantum Well Lasers on In_Ga_As Ternary Substrate
- Structural Analysis for Water Absorption of SiOF Films Prepared by High-Density-Plasma Chemical Vapor Deposition
- Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma Chemical Vapor Deposition
- Effect of Measurement Error of Cardiotocograph to Spectral Analysis : Medical Ultrasonics
- Influence of Gas Desorption from SiOF Film Prepared by High-Density-Plasma Chemical Vapor Deposition upon TiN/Ti Film
- Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma CVD