スポンサーリンク
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A. | 論文
- High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar ($20\bar{2}1$) GaN Substrates
- Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy
- Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors
- High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2
- Electroluminescence Characterization of ($20\bar{2}1$) InGaN/GaN Light Emitting Diodes with Various Wavelengths
- Determination of Internal Loss in Nitride Lasers from First Principles
- Propagation of Spontaneous Emission in Birefringent $m$-Axis Oriented Semipolar ($11\bar{2}2$) (Al,In,Ga)N Waveguide Structures
- Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures
- Optimization of Device Structures for Bright Blue Semipolar ($10\bar{1}\bar{1}$) Light Emitting Diodes via Metalorganic Chemical Vapor Deposition
- 30-mW-Class High-Power and High-Efficiency Blue Semipolar ($10\bar{1}\bar{1}$) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
- Vertical Stand Transparent Light-Emitting Diode Architecture for High-Efficiency and High-Power Light-Emitting Diodes
- High Power and High Efficiency Blue InGaN Light Emitting Diodes on Free-Standing Semipolar $(30\bar{3}\bar{1})$ Bulk GaN Substrate
- Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
- Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal-Organic Chemical Vapor Deposition Using a Graded Growth Strategy
- High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar $m$-plane Bulk GaN Substrate
- Nonpolar $m$-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
- Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
- Photoelectrochemical Properties of Nonpolar and Semipolar GaN
- Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown $a$-Plane GaN