スポンサーリンク
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A. | 論文
- Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III--Nitride Light-Emitting Diodes
- Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors
- Green Semipolar (20\bar{2}\bar{1}) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
- Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells
- Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature
- Green Semipolar (2021) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
- Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy
- Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC
- Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors
- Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors
- Green Semipolar (2021) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth