Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures

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概要

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• We describe growth and characterization of N-face GaN-based high electron mobility structures using plasma-assisted molecular beam epitaxy (MBE) on C-face SiC substrates. A two-step buffer approach consisting of a low Ga-flux followed by high Ga-flux was used to achieve smooth morphologies and threading dislocation (TD) densities as low as $1.5\times 10^{10}$ cm-2. These TD densities are comparable to the lowest achieved on Ga-face GaN grown by MBE on Si-face SiC. Secondary ion mass spectrometry measurements were carried out to study O, C, and Si incorporation. Hall, capacitance–voltage and transfer length method measurements on GaN/AlGaN/GaN modulation-doped heterostructures were found to match simulations, and a charge of $1\times 10^{13}$ cm-2 with electron mobility above 1000 cm2 V-1 s-1 was measured.

• 2005-11-10

著者

• WONG M.

  ECE Department, University of California

• WU F.

  Materials Department, University of California

• Rajan S.

  Ece Department University Of California

• Mishra U.

  Ece Department University Of California

• Fu Y.

  Ece Department University Of California

• Speck J.

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• SPECK J.

  Materials Department and Electrical Engineering Department, University of California

関連論文

• MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors
• The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganie Chemical Vapor Deposition
• CK-1-1 Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs
• Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures
• Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures
• The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition

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