The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• The evolution of morphology and associated extended defects in GaN thin films grown on sapphire by metalorganic chemical vapor deposition (MOCVD) are shown to depend strongly on the growth environment. For the commonly used two-step growth process, a change in growth parameter such as reactor pressure influences the initial high temperature (HT) GaN growth mechanism. By means of transmission electron microscopy (TEM), atomic force microscopy (AFM), and high resolution X-ray diffraction (HRXRD) measurements, it is shown that the initial density of HT islands on the nucleation layer (NL) and subsequently the threading dislocation density in the HT GaN film may be directly controlled by tailoring the initial HT GaN growth conditions.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1998-08-15

著者

• WU X.

  Electrical and Computer Engineering Department, College of Engineering, University of California

• GOLAN Y.

  Materials Science Department, College of Engineering, University of California

• Fini P.

  Materiais And Electrical And Computer Engineering University Of Callfornia

• Tarsa E.

  Materials Science Department College Of Engineering University Of California

• Srikant V.

  Materials Science Department College Of Engineering University Of California

• Denbaars S.

  Materiais And Electrical And Computer Engineering University Of Callfornia

• Keller S.

  Electrical And Computer Engineering & Materials Department University Of California

• SPECK J.

  Materials Department and Electrical Engineering Department, University of California

• Fini P.

  Materials Science Department, College of Engineering, University of California, Santa Barbara, CA 93106, USA

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• MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors
• The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganie Chemical Vapor Deposition
• Morphological and Structural Transitions in GaN Filrms Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
• CK-1-1 Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs
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• High Voltage GaN HEMTs
• Substrate Reactivity and "Controlled Contamination" in Metalorganic Chemical Vapor Deposition of GaN on Sapphire
• Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures
• The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition

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