スポンサーリンク
Lg Semicon. Ltd. | 論文
- Trade-Off between Hot Carrier Effect and Current Driving Capability Due to Drain Contact Structures in Deep Submicron MOSFETs
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs
- Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation
- Low Temperature Formation of Highly Thermal Immune Ni Germanosilicide Using NiPt Alloy with Co Over-layer in Si_Ge_x according to Different Ge Fractions (x)
- Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology
- Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
- Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
- Characterization of Corner Induced Leakage Current in Shallow Silicided n^+/p Junction
- Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology
- 集中度指数と空間自己相関をハウス・キュウリ上のミカンキイロアザミウマの空間分布パターンの解析
- Analysis of spatial pattern of Frankliniella occidentalis(Thysanoptera:Thripidae) on greenhouse cucumbers using dispersion index and spatial autocorrelation
- Shallow Trench Isolation Characteristics with High-Density-Plasma Chemical Vapor Deposition Gap-Fill Oxide for Deep-Submicron CMOS Technologies
- Dependence of Subthreshold Hump and Reverse Narrow Channel Effect on the Gate Length by Suppression of Transient Enhanced Diffusion at Trench Isolation Edge
- Dependence of Sub-Threshold Hump and RNWE Characteristics on the Gate Length by TED
- Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
- Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
- Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
- Characterization of Corner-Induced Leakage Current of a Shallow Silicided n^+/p Junction for Quarter-Micron MOSFETs