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Institute of Electronics, National Chiao-Tung University | 論文
- Experimental Comparison of Off-State Current between High-Temperature- and Low-Temperature-Processed Undoped Channel Polysilicon Thin-Film Trarnsistors
- TiWN Schottky Contacts to n-Ga_In_P
- Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
- The Combined Effects of Nitrogen Implantation at S/D Extension and N_2O Oxide on 0.18μm N- and P-Metal Oxide Field Effect Transistors (MOSEETs)
- The Role of a Resist During O_2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
- Characterization of Antenna Effect by Nondestructive Gate Current Measurement
- P-SONOS and N-SONOS Transient Current and Field Modeling for Program and Erase
- A Novel Process-Compatible Floating Channel Crystallization Technique to Fabricate High-Performance Poly-Si TFTs
- Improvement of Electrical Characteristics for Novel Fluorine-Incorporated Poly-Si TFTs with TiN Gate Electrode and Pr_2O_3 Gate Dielectric
- Improvements on Electrical Characteristics of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors with HfO_2 Gate Stacks by Post Deposition N_2O Plasma Treatment
- Electrical Characteristics of Thin HfO_2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
- The Characterization of Al_2O_3 Prepared by Anodic Oxidation
- Back-Gating Effects on the Ga_In_P/InP/InGaAs High-Electron-Mobility Transistor
- Cation Source Dependence of Ga_In_P Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition
- Integration of Modified Plasma-Enhanced Chemical Vapor Deposited Tetraethoxysilane Intermetal Dielectric and Chemical-Mechanical Polishing Processes for 0.35 μm IC Device Reliability Improvement
- Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
- Analysis of Average Transport Critical Current Density of Oxide Superconductors Deposited on a Silver Base
- Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
- Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
- The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor