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Institute of Electronics, National Chiao-Tung University | 論文
- Photoluminescence of Heavily p-Type-Doped GaAs : Temperature and Concentration Dependences
- The Effect of Temperature on I-V Characteristics of a-Si:H Photodiode
- Direct Observation of Channel-Doping-Dependent Reverse Short Channel Effect Using Decoupled C-V Technuque
- Synthesis of High-T_c YBa_2Cu_3O_ Superconductors at a Low Annealing Temperature from a Glass Precursor
- Effect of Strain on Static and Dynamic NBTI of pMOSFETs
- A New Symmetric Inductor Model for RF Circuits under Single-end and Differential Operations
- Improved electrical characteristics of Pt/Gd_2O_3/GaAs MOS capacitors with surface preparation procedures
- Deep Sub-Micron Strained Si_Ge_ Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N_2O-Annealed SiN Gate Dielectric
- Subpicosecond Carrier Lifetime in Low-Temperature-Grown GaAs Layer on (311)-Oriented Substrate
- Effect of Electric Potential and Mechanical Force on Copper Electro-Chemical Mechanical Planarization
- Investigation of the Galvanic Effect between RuN Barriers and Cu Seed Layers
- Electrical Properties of High-$\kappa$ Praseodymium Oxide Polycrystalline Silicon Thin-Film Transistors with Nitrogen Implantation
- Electrical Characteristics of Thin HfO2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments