スポンサーリンク
Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan | 論文
- Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
- AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
- Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
- High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
- DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
- Temperature Dependence of Piezoelectric Constant of 0.5PbNi_Nb_O_3-0.5Pb(Zr, Ti)O_3 Ceramics in the Vicinity of Morphotropie Phase Boundary
- Piezoelectric Properties of PbNi_Nb_O_3-PbTiO_3-PbZrO_3 Ceramics
- Crystal Structure and Madelung Potential in R_Ce_xCuO_ (R=Pr, Nd, Sm, Eu and Gd) System
- Raman Scattering in Cuprate Oxides without Apical Oxygen Atoms
- The Effect of Ca_2PbO_4 Addition on Superconductivity in a Bi-Sr-Cu-O System
- Effects of SiO_2 on Surface Smoothness and Densification of Alumina
- Surface Roughness of Alumina Substrates
- Effect of Electrode Materials on Lead Lanthanum Zirconate Titanate with Heating under Reduced Atmosphere
- Effect of Oxygen Annealing on Ferroelectricity of BiFeO3 Thin Films Formed by Pulsed Laser Deposition
- Electrooptic Properties of Lead Zirconate Titanate Films Prepared on Silicon Substrate
- High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators
- Crystallinity of Microscopically Patterned (Pb,La)(Zr,Ti)O3 Films on (001)Nb-Doped SrTiO3 Substrates Prepared by Chemical Solution Deposition Process with Resist Molds
- Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor
- InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance
- Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
- Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure
- Development of High Electron Mobility Transistor
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Using SiN/SiO2/SiN Triple-Layer Insulators