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Fujitsu Lab. Ltd. Atsugi Jpn | 論文
- Numerical Study of Effect of Fabrication Damage on Carrier Dynamics in MQW Narrow Wires
- Helicon-Wave-Excited Plasma Nitridation of GaAs After Short-Time Plasma Oxidation for Fabrication of Damage-Free GaN/GaAs Interface
- Growth of "Oxide-Less" GaN Layer by Helicon-Wave Excited N_2-Ar Plasma Treatment of Al/GaAs Structure
- Double-Pulse Operation in XeCl Excimer Laser for Simulation of High-Repetition-Rate Performance
- A Chemical-State-Discriminated XPED Study on Structure of Thin CaO Layer Formed by Electron Bombardment Heating on CaF_2(111)
- Zn and Si Ion Emission from Au-Zn-Si LM Ion Source
- Effect of Ambient Gases on Emission Properties of Pd-Ni-Si-Be-B LM Ion Source
- Emission Stability of Au-Si-Be LM Ion Source in Various Gas Environments
- Emission Characteristics of Au-Si-Be LM Ion Source
- Suppression of the Phase Transition to C54 TiSi_2 due to Epitaxial Growth of C49 TiSi_2 on Si(001) Substrates in Silicidation Process
- Grazing Incidence X-Ray Diffraction Study on Effect of Implanted BF^+_2 and Linewidth on Titanium Silicidation
- Transmission Electron Microscopy Observation of CoSi_x Spikes in Si Substrates during Co-silicidation Process
- Fine Adjustment Based on Model for X-Ray Absorption Fine Structure of Ni-Fe Alloy
- Internal Bias Field of Sarcosine-Doped Triglycine Sulfate Crystal
- Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
- Effect of gate-recess structure on electron transport in InP-based high electron mobility transistors studied by Monte Carlo simulations
- Evaluation of Shot Position Error in Electron Beam Lithography Using Overlay Metrology with 'One-Shot' Inspection Mark
- Simultaneous Temperature Measurement of Wafers in Chemical Mechanical Polishing of Silicon Dioxide Layer
- A pH-Controlled Chemical Mechanical Polishing Method for Thin Bonded Silicon-on-Insulator Wafers
- Bond Strength of Bonded SOI Wafers