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Device Development Center Hitachi Ltd. | 論文
- SCREENING ARABIDOPSIS MUTANTS LACKING REGULATION OF LIGHT HARVESTING USING CHLOROPHYLL FLUORESCENCE IMAGING
- Thiolase Involved in Bile Acid Formation^1
- STEREOSPECIFIC FORMATION OF (24R, 25R)-3α, 7α, 12α, 24-TETRAHYDROXY-5β-CHOLESTAN-26-OIC ACID CATALYZED WITH A PEROXISOMAL BIFUNCTIONAL D-3-HYDROXYACYL-CoA DEHYDRATASE/D-3-HYDROXYACYL-CoA DEHYDROGENASE
- Physiological Role of D-3-Hydroxyacyl-CoA Dehydratase/D-3-Hydroxyacyl-CoA Dehydrogenase Bifunctional Protein^1
- C-11-1 微細MOSトランジスタの特性ばらつきの研究(C-11.シリコン材料・デバイス,一般セッション)
- 極薄膜SOIトランジスタにおける量子効果による移動度向上(ゲートスタック構造の新展開(I),ゲート絶縁膜,容量膜,機能膜及びメモリ技術)
- Reducing Reverse-Bias Current in 450℃-Annealed n^+p Junction by Hydrogern Radical Sintering
- An Effective Defect-Repair Scheme for a High Speed SRAM (Special Issue on LSI Memories)
- Low-Temperature Etching for Deep-Submicron Trilayer Resist
- Circuit and Functional Design Technologies for 2 Mb VRAM (Special Issue on LSI Memories)
- Si(110)面正孔移動度における方向依存性の起源 : 極薄SOIを用いた実験的考察(IEDM特集(先端CMOSデバイス・プロセス技術))
- Technique to Diagnose Open Defects that Takes Coupling Effects into Consideration(Dependable Computing)
- (110)SOI基板上に作製したGAAシリコンナノワイヤの移動度評価(低電圧/低消費電力技術、新デバイス・回路とその応用)
- シリコンナノワイヤpMOSFET及び室温動作単正孔トランジスタにおける一軸歪みの効果(機能ナノデバイス及び関連技術)
- シリコンナノワイヤpMOSFET及び室温動作単正孔トランジスタにおける一軸歪みの効果(機能ナノデバイス及び関連技術)
- A Bipolar-Based 0.5μm BiCMOS Technology on Bonded SOI for High-Speed LSIs (Special Section on High Speed and High Density Multi Functional LSI Memories)
- Noise Reduction Techniques for a 64kb ECL-CMOS SRAM with a 2ns Cycle Time (Special Issue on LSI Memories)
- Redundancy Technique for Ultra-High-Speed Static RAMs
- A Thermally Robust Ti-Rich TiNx Contact Metallization Realizing and Interconnect System Suitable to 0.10-μm DRAMs and Beyond
- A Synchronous DRAM with New High-Speed I/O Lines Method for the MultiMedia Age