A Thermally Robust Ti-Rich TiNx Contact Metallization Realizing and Interconnect System Suitable to 0.10-μm DRAMs and Beyond

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• Fukuda Naoki

  Semiconductor Group Hitachi Ltd.

• ASANO Isamu

  ELPIDA MEMORY, Inc.

• NAKAMURA Yoshitaka

  ELPIDA MEMORY, Inc.

• AOKI Hideo

  Device Development Center, Hitachi Ltd.

• YAMADA Satoru

  ELPIDA MEMORY, Inc.

• SEKIGUCHI Toshihiro

  ELPIDA MEMORY, Inc.

• Asano Isamu

  Elpida Memory Inc.

• Sekiguchi Toshihiro

  Elpida Memory Inc.

• Yamada Satoru

  Elpida Memory Inc. Device Development Center Hitachi Ltd.

• Nakamura Yoshitaka

  Elpida Memory Inc.

• Aoki Hideo

  Device Development Center Hitachi Ltd.

• Yamada Satoru

  Elpida Memory Inc.

関連論文

• A Thermally Robust Ti-Rich TiNx Contact Metallization Realizing and Interconnect System Suitable to 0.10-μm DRAMs and Beyond
• Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
• A 500℃ fabrication process for MIM capacitors-based on a Ta_2O_5/Nb_2O_5 bilayer with high permittivity-for DRAM and SoC applications
• Novel Storage-Node Contacts with Stacked Point-Cusp Magnetron Sp-TiN Barrier for Metal-Insulator-Metal Ru/Ta_2O_5/Ru Capacitors in Gigabit Dynamic Random Access Memories
• Analysis of Boron Penetration and Gate Depletion Using Dual-Gate PMOSFETs for High Performance G-Bit DRAM Design(Special Issue on Microelectronic Test Structures)

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