Novel Storage-Node Contacts with Stacked Point-Cusp Magnetron Sp-TiN Barrier for Metal-Insulator-Metal Ru/Ta_2O_5/Ru Capacitors in Gigabit Dynamic Random Access Memories

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-06-15

著者

• ASANO Isamu

  ELPIDA MEMORY, Inc.

• NAKAMURA Yoshitaka

  ELPIDA MEMORY, Inc.

• Asano Isamu

  Elpida Memory Inc.

• Goto Hidekazu

  Elpida Memory Inc.

• KAWAGOE Tsuyoshi

  Elpida Memory, Inc.

• KUROKI Keiji

  Elpida Memory, Inc.

• NAKANISHI Naruhiko

  Elpida Memory, Inc.

• Kuroki Keiji

  Elpida Memory Inc.

• Kawagoe Tsuyoshi

  Elpida Memory Inc.

• Nakanishi Naruhiko

  Elpida Memory Inc.

• Nakamura Yoshitaka

  Elpida Memory Inc.

関連論文

• A Thermally Robust Ti-Rich TiNx Contact Metallization Realizing and Interconnect System Suitable to 0.10-μm DRAMs and Beyond
• Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
• A 500℃ fabrication process for MIM capacitors-based on a Ta_2O_5/Nb_2O_5 bilayer with high permittivity-for DRAM and SoC applications
• Novel Storage-Node Contacts with Stacked Point-Cusp Magnetron Sp-TiN Barrier for Metal-Insulator-Metal Ru/Ta_2O_5/Ru Capacitors in Gigabit Dynamic Random Access Memories

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