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Department of Electronics Faculty of Technology, Kanazawa University | 論文
- Identification of a New Defect in Silicon Nitride Films
- Thermal Equilibration of Defect Density in Hydrogenated Amorphous Silicon-Germanium Alloys
- Comparison between ESR and CPM for the Gap States in a-Si-Ge:H
- Thin Film Patterning by Laser Lift-Off
- Comparative Study of Defect Densities Evaluated by Electron Spin Resonance and Constant Photocurrent Method in Undoped and N-Doped Hydrogenated Amorphous Silicon
- Electron-Beam-Induced Nucleation Centers and Selective Deposition of Thin Zinc Films
- Photocreated Defects in Very Thin Hydrogenated Amorphous Silicon Films : Semiconductors
- Relation between ESR and Hydrogen in Magnetron-Sputtered a-Ge:H
- F and ^1H NMR and ESR in a-Si:F:H and a-Si:H
- Influence of Hydrogen Content and Si-H Bond Structure on Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon Films
- Influence of Light-Soaking Temperature on the Distribution of Thermal-Annealing Activation Energies for Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon
- Distributions of Thermal-Annealing Activation Energies for Light-Induced Spins in Fast and Slow Processes in a-Si_N_x:H Alloys
- Light-Induced ESR in Variously Treated Hydrogenated Amorphous Silicon
- Light-induced Annealing of Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon
- Relationship between Electrical Conductivity and Charged-Dangling-Bond Density in Nitrogen- and Phosphorus-Doped Hydrogenated Amorphous Silicon
- Light-Induced-ESR Study of Undoped and N-Doped Hydrogenated Amorphous Silicon
- Decay Behavior of Light-Induced ESR in Hydrogenated Amorphous Silicon-Nitrogen Alloys
- Spectroscopic Study on N_O-Plasrma Oxidation of Hydrogenated Amorphous Silicon and Behavior of Nitrogen
- Light Soaking of a-Si:H at 77 K
- Relationship between Photodarkening and Light-Induced ESR in Amorphous Ge-S Films Alloyed with Lead