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Central Research Laboratory, Mitsubishi Electric Corp. | 論文
- Microfabrication of Anti-Reflective Chromium Mask by Gas Plasma : A-1: DEVICE TECHNOLOGY (I)
- Measurement and Calculation of SiH_2 Radical Density in SiH_4 and Si_2H_6 Plasma for the Deposition of Hydrogenated Amorphous Silicon Thin Films
- Measurement of SiH_2 Densities in an RF-Discharge Silane Plasma Used in the Chemical Vapor Deporsition of Hydrogenated Amorphous Silicon Film
- Spectroscopic Measurements of the Production and the Transport of CH Radicals in a Methane Plasma Used for the CVD of a-C:H
- On the Reaction Kinetics in a Mercury Photosensitized CVD of a-Si:H Films
- A Numerical Study on Gaseous Reactions in Silane Pyrolysis
- Photosensitive Electron Spin Resonance in ZnSe : Si Crystals
- Electron Spin Resonance of Eu^ in ZnSe
- Reaction Mechanism of Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone at Atmospheric Pressure
- A Study on the Behavior of SiO_2 Film Precursors with Trench Deposition Method for SiH_4/O_2 Low Pressure Chemical Vapor Deposition
- Sputtered W-Ti Film for X-Ray Mask Absorber
- Persistent Current in Y-Ba-Co Oxides Superconductor at Liquid Nitrogen Temperature
- Fabrication of Diamond Membranes for X-Ray Masks by Hot-Filament Method
- The Effect of Gas Plasma Irradiation on Transistor
- Characterization of Solid Oxide Fuel Cell Components by Gas Permeability Measurement
- Numerical Analysis of Tunneling Current due to Electric Field Concentration at Gate Edge of Polysilicon/SiO_2/Silicon Structures
- The Growth Mechanism of Diamond Crystals in Acetylene Flames
- Study of Surface Reaction Probability of CF_x Radicals by Trench Deposition Method
- Application of Diffusion from Implanted Polycrystalline Silicon to Bipolar Transistors : A-2: DEVICE TECHNOLOGY (II)
- A New Undercutting Phenomenon in Plasma Etching