Application of Diffusion from Implanted Polycrystalline Silicon to Bipolar Transistors : A-2: DEVICE TECHNOLOGY (II)
スポンサーリンク
概要
著者
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Horie Kazuo
Lsi Development Laboratory Mitsubishi Electric Corporation
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TSUKAMOTO Katsuhiro
Kitaitami Works, Mitsubishi Electric Corporation
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KOMIYA Hiroyoshi
Central Research Laboratory, Mitsubishi Electric Corp.
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Akasaka Youichi
Lsi Development Laboratory Mitsubishi Electric Corporation
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AKASAKA Youichi
Central Research Laboratory, Mitsubishi Electric Corporation
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KAWAGUCHI Mikio
Central Research Laboratory, Mitsubishi Electric Corporation
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SATO Hirokazu
Central Research Laboratory, Mitsubishi Electric Corporation
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HORIE Kazuo
Central Research Laboratory, Mitsubishi Electric Corporation
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Komiya Hiroyoshi
Central Research Laboratory Mitsubishi Electric Corporation
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Komiya Hiroyoshi
Central Research Lab. Mitsubishi Electric Corp.
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Tsukamoto Katsuhiro
Lsi Development Laboratory Mitsubishi Electric Corporation
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Sato Hirokazu
Central Research Laboratory Mitsubishi Electric Corporation
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Kawaguchi Mikio
Central Research Laboratory Mitsubishi Electric Corporation
関連論文
- Mechanism of Reactive Ion Etching Lag in WSi_2 Etching Using Electron Cyclotron Resonance Plasma
- Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma
- Photosensitive Electron Spin Resonance in ZnSe : Si Crystals
- Electron Spin Resonance of Eu^ in ZnSe
- The Effect of Gas Plasma Irradiation on Transistor
- Range Distribution of Implanted Arsenic in Silicon Dioxide
- Application of Diffusion from Implanted Polycrystalline Silicon to Bipolar Transistors : A-2: DEVICE TECHNOLOGY (II)
- Study of Tin Diffusion into Silicon by Backscattering Analysis
- Thermal Diffusion of Ion-Implanted Arsenic in Silicon