Thermal Diffusion of Ion-Implanted Arsenic in Silicon

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概要

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• To investigate the thermal diffusion of ion-implanted arsenic, arsenic and carrier profiles were measured by the Rutherford backscattering method and differential conductivity measurement, respectively. Only a fraction of the arsenic is electrically active, and the relation between the total arsenic concentration C_T and the electrically active arsenic concentration C_A is given by the empirical formula, C_T=C_A+7.0×10^<-66>・exp (1.05 eV/kT)・C_A. The effective arsenic diffusion coefficient was developed, taking into account the electrical activity of arsenic, and is expressed by D_<AS>=(n/n_i) {1+C_A・∂[In (n/n_i)/∂C_T}・D_i, where n=n(C_T) is the carrier concentration as a function of C_T, and n_i is the intrinsic carrier concentration. The calculated arsenic profiles and the sheet resistivity were in good agreement with the measured ones.

• 社団法人応用物理学会の論文
• 1980-01-05

著者

• Akasaka Yoichi

  Lsi Development Laboratory Mitsubishi Electric Corporation

• TSUKAMOTO Katsuhiro

  LSI Development Laboratory, Mitsubishi Electric Corporation

• KIJIMA Koichi

  LSI Development Laboratory, Mitsubishi Electric Corporation

• Tsukamoto Katsuhiro

  Lsi Development Laboratory Mitsubishi Electric Corporation

• Kijima Koichi

  Lsi Development Laboratory Mitsubishi Electric Corporation

関連論文

• Range Distribution of Implanted Arsenic in Silicon Dioxide
• Application of Diffusion from Implanted Polycrystalline Silicon to Bipolar Transistors : A-2: DEVICE TECHNOLOGY (II)
• Study of Tin Diffusion into Silicon by Backscattering Analysis
• A New Transistor Structure for High Speed Bipolar LSI : A-4: LSI DEVICES
• Thermal Diffusion of Ion-Implanted Arsenic in Silicon

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