A New Transistor Structure for High Speed Bipolar LSI : A-4: LSI DEVICES
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-04-30
著者
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Akasaka Yoichi
Lsi Development Laboratory Mitsubishi Electric Corporation
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Nakata Hidefumi
Lsi Development Laboratory Mitsubishi Electric Corp.
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Sakurai Hiromi
Lsi Development Laboratory Mitsubishi Electric Corporation
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MURAKAMI Kenji
LSI Development laboratory, Mitsubishi Electric Corporation
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KIJIMA Koichi
LSI Development Laboratory, Mitsubishi Electric Corporation
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Kijima Koichi
Lsi Development Laboratory Mitsubishi Electric Corporation
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Murakami Kenji
Lsi Development Laboratory Mitsubishi Electric Corporation
関連論文
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- The Role of a Photoresist Film on Reverse Gas Plasma Etching of Chromium Films
- A high Speed I^2L 1K Static RAM with 20 ns Access Time : A-3: MOS DEVICE AND LIST (3)
- A New Transistor Structure for High Speed Bipolar LSI : A-4: LSI DEVICES
- Loading Effect and Temperature Dependence of Etch Rate in CF_4 Plasma
- Thermal Diffusion of Ion-Implanted Arsenic in Silicon