A high Speed I^2L 1K Static RAM with 20 ns Access Time : A-3: MOS DEVICE AND LIST (3)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-03-01
著者
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Nakano Takao
Lsi Dev
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KATO Shu-ichi
LSI Development laboratory, Mitsubishi Electric Corporation
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MURAKAMI Kenji
LSI Development laboratory, Mitsubishi Electric Corporation
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UEDA Masahiro
LSI Development laboratory, Mitsubishi Electric Corporation
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HORIBA Yasutake
LSI Development laboratory, Mitsubishi Electric Corporation
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Kato Shu-ichi
Lsi Development Laboratory Mitsubishi Electric Corporation
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Horiba Yasutake
Lsi Development Laboratory Mitsubishi Electric Corporation
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Ueda Masahiro
Lsi Development Laboratory Mitsubishi Electric Corporation
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Murakami Kenji
Lsi Development Laboratory Mitsubishi Electric Corporation
関連論文
- A high Speed I^2L 1K Static RAM with 20 ns Access Time : A-3: MOS DEVICE AND LIST (3)
- A New Transistor Structure for High Speed Bipolar LSI : A-4: LSI DEVICES