Study of Tin Diffusion into Silicon by Backscattering Analysis

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概要

• 論文の詳細を見る

• Diffusion of tin into Si from tin-doped oxide is studied by the backscattering and channeling analyses. The depth distribution of tin in Si can be fitted to complementary error functions. The diffusion coefficient can be expressed as D=0.054 exp(-3.5eV/kT). The solubility limit in Si and the segregation constant between Si and SiO_2 are estimated to be 6〜8×10^<19>/cm^3 and 0.066 at 1100℃〜1200℃, respectively. The lattice location of tin in Si is also determined by angular scan, and it is found that more than 90% of tin atoms occupy substitutional sites. Uniformity of the concentration over a silicon wafer is also checked with the microanalysis system by using backscattering and is found to be good. Effect of post-diffusion of phosphorous or boron on the depth profile of tin is also studied.

• 社団法人応用物理学会の論文
• 1974-10-05

著者

• Horie Kazuo

  Lsi Development Laboratory Mitsubishi Electric Corporation

• Akasaka Youichi

  Lsi Development Laboratory Mitsubishi Electric Corporation

• Nakamura Genshiro

  Kitaitami Works Mitsubishi Electric Corporation

• Yukimoto Yoshinori

  Kitaitami Works Mitsubishi Electric Corporation

• AKASAKA Youichi

  Central Research Laboratory, Mitsubishi Electric Corporation

• HORIE Kazuo

  Central Research Laboratory, Mitsubishi Electric Corporation

• TSUKAMOTO Katsuhiro

  Central Research Laboratory, Mitsubishi Electric Corporation

• Tsukamoto Katsuhiro

  Lsi Development Laboratory Mitsubishi Electric Corporation

関連論文

• Range Distribution of Implanted Arsenic in Silicon Dioxide
• Application of Diffusion from Implanted Polycrystalline Silicon to Bipolar Transistors : A-2: DEVICE TECHNOLOGY (II)
• Study of Tin Diffusion into Silicon by Backscattering Analysis
• Multiple Dislocation Loops Observed in Silicon Crystals Grown in Hydrogen Ambient
• X-Ray Observations of Anomalous Etch Patterns in Silicon Crystals
• The Nature of the Source of Dislocation Loops Generated by Gold Diffusion into Silicon Crystals
• Thermal Diffusion of Ion-Implanted Arsenic in Silicon

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