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Central Research Institute Mitsubishi Materials Corporation | 論文
- Simulation of Light Scattering by a Particle on a Film-Coated Substrate Using Coupled-Dipole Method
- Light Scattering by Submicron Particles on Film-Coated Wafers
- Adsorption and Desorption of Metallic Impurities on Si Wafer Surface in SC1 Solution
- Effect of Crystal Pulling Rate on Formation of Crystal-Originated "Particles" on Si Wafers
- Crystal-Originated Singularities on Si Wafer Surface after SCl Cleaning
- Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
- Effect of Native Oxide upon Formation of Amorphous SiO_x Layer at the Interface of Directly Bonded Silicon Wafers
- Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
- Field Ion-Scanning Tunneling Microscope Equipped with Molecular Beam Epitaxy and Its Application to Study Semiconductor Surface Structure
- Effect of Interstitial Oxygen on Formation of Amorphous SiO_x Layer in Directly Bonded Czoehralski Silicon Wafers
- Change of Young's Modulus with Increasing Applied Tensile Strain in Open Cell Nickel and Copper Foams
- Tensile Deformation and Failure Behavior of Open Cell Nickel and Copper Foams
- Changes in Microstructure of Al/AlN Interface during Thermal Cycling
- High-Resolution Transmission Electron Microscopy Observation of Liquid-Phase Bonded Aluminum/Sapphire Interfaces
- Effect of SC1 Process on Silicon Surface Microroughness and Oxide Breakdown Characteristics
- A Study of Defect Formation Mechamism at Edges of Local Oxidation of Silicon Structure
- Metal Impurity Trapping Effect by Stress at Edges of Local Oxidation of Silicon Structure
- Stress-Enhanced Diffusion of Boron at the Interface of a Directly Bonded Silicon Wafer
- Growth of Twinned Lithium Tetraborate Crystal and its Application to Bimorph Actuator
- Time-Dependent Variation of Composition of SC1 Solution