64kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5V Program and Long Data Retention (Special Issue : Solid State Devices and Materials (2))
スポンサーリンク
概要
著者
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Sakai Shigeki
National Inst. Of Advanced Industrial Sci. And Technol.
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Takahashi Mitsue
National Inst. Of Advanced Industrial Sci. And Technol.
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Takeuchi Ken
Department of Electrical Engineering and Information Systems, Chuo University, Bunkyo, Tokyo 112-8551, Japan
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Zhang Xizhen
National Engineering Laboratory for AIDS Vaccine, Jilin University
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