Initialize and Weak-Program Erasing Scheme for High-Performance and High-Reliability Ferroelectric NAND Flash Solid-State Drive
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概要
- 論文の詳細を見る
Initialize and weak-program erasing scheme is proposed to achieve high-performance and high-reliability Ferroelectric (Fe-) NAND flash solid-state drive (SSD). Bit-by-bit erase VTH control is achieved by the proposed erasing scheme and history effects in Fe-NAND is also suppressed. History effects change the future erase VTH shift characteristics by the past program voltage. The proposed erasing scheme decreases VTH shift variation due to history effects from ±40% to ±2% and the erase VTH distribution width is reduced from over 0.4V to 0.045V. As a result, the read and VPASS disturbance decrease by 42% and 37%, respectively. The proposed erasing scheme is immune to VTH variations and voltage stress. The proposed erasing scheme also suppresses the power and bandwidth degradation of SSD.
- The Institute of Electronics, Information and Communication Engineersの論文
- 2012-04-01
著者
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TAKEUCHI Ken
The University of Tokyo
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SAKAI Shigeki
National Institute of Advanced Industrial Science and Technology
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Sakai Shigeki
National Inst. Of Advanced Industrial Sci. And Technol.
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HATANAKA Teruyoshi
The University of Tokyo
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Takeuchi Ken
The Univ. Of Tokyo
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Takahashi Mitsue
National Inst. Of Advanced Industrial Sci. And Technol.
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Yajima Ryoji
The University Of Tokyo
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MIYAJI Kousuke
the University of Tokyo
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