Pt/SrBi_2Ta_2O_9/Hf-Al-O/Si Field-Effect-Transistor with Long Retention Using Unsaturated Ferroelectric Polarization Switching

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-11-30

著者

• Takahashi Mitsue

  National Institute Of Advanced Industrial Science And Technology

• SAKAI Shigeki

  National Institute of Advanced Industrial Science and Technology

• ILANGOVAN Rajangam

  National Institute of Advanced Industrial Science and Technology

関連論文

• Pt/SrBi_2Ta_2O_9/Hf-Al-O/Si Field-Effect-Transistor with Long Retention Using Unsaturated Ferroelectric Polarization Switching
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• Initialize and Weak-Program Erasing Scheme for High-Performance and High-Reliability Ferroelectric NAND Flash Solid-State Drive
• Pt/SrBi2Ta2O9/Hf-Al-O/Si Field-Effect-Transistor with Long Retention Using Unsaturated Ferroelectric Polarization Switching

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