Self-Aligned-Gate Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistors with Long Memory Retention

スポンサーリンク

概要

著者

関連論文

Pt/SrBi_2Ta_2O_9/Hf-Al-O/Si Field-Effect-Transistor with Long Retention Using Unsaturated Ferroelectric Polarization Switching
Fabrication and Electrical Characteristics of a Trench-Type Metal-Ferroelectric-Metal-Insulator-Semiconductor Field Effect Transistor
Growth of High-Quality Single-Phase Bi_2Sr_2CaCu_2O_x Whiskers by a New Growth-Melt-Regrowth Method
Growth of Single Phase Bi_2Sr_2CaCu_2O_x Whiskers Using Optimized Starting Compositions for Glassy Precursors
A Negative Word-Line Voltage Negatively-Incremental Erase Pulse Scheme with $\Delta V_{\text{TH}} = 1/6\Delta V_{\text{ERASE}}$ for Enterprise Solid-State Drive Application Ferroelectric-NAND Flash Memories
Self-Aligned-Gate Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistors with Long Memory Retention
Improvement of Read Disturb, Program Disturb and Data Retention by Memory Cell V_ Optimization of Ferroelectric (Fe)-NAND Flash Memories for Highly Reliable and Low Power Enterprise Solid-State Drives (SSDs)
A 0.5-V Six-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors
64kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5V Program and Long Data Retention (Special Issue : Solid State Devices and Materials (2))
Initialize and Weak-Program Erasing Scheme for High-Performance and High-Reliability Ferroelectric NAND Flash Solid-State Drive
Pt/SrBi2Ta2O9/Hf-Al-O/Si Field-Effect-Transistor with Long Retention Using Unsaturated Ferroelectric Polarization Switching
Growth of Single Phase Bi2Sr2CaCu2Ox Whiskers Using Optimized Starting Compositions for Glassy Precursors
FeCMOS logic inverter circuits with nonvolatile-memory function
Growth of High-Quality Single-Phase Bi2Sr2CaCu2Ox Whiskers by a New Growth–Melt–Regrowth Method

もっと見る

スポンサーリンク