Takahashi Mitsue | National Inst. Of Advanced Industrial Sci. And Technol.
スポンサーリンク
概要
関連著者
-
Takahashi Mitsue
National Inst. Of Advanced Industrial Sci. And Technol.
-
Sakai Shigeki
National Inst. Of Advanced Industrial Sci. And Technol.
-
SAKAI Shigeki
National Institute of Advanced Industrial Science and Technology
-
TAKEUCHI Ken
The University of Tokyo
-
Takahashi Mitsue
National Institute Of Advanced Industrial Science And Technology
-
HATANAKA Teruyoshi
The University of Tokyo
-
Takeuchi Ken
The Univ. Of Tokyo
-
Hatanaka Teruyoshi
Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
-
Yajima Ryoji
Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
-
Takeuchi Ken
Department of Electrical Engineering and Information Systems, Chuo University, Bunkyo, Tokyo 112-8551, Japan
-
ILANGOVAN Rajangam
National Institute of Advanced Industrial Science and Technology
-
Yajima Ryoji
The University Of Tokyo
-
MIYAJI Kousuke
the University of Tokyo
-
Ilangovan Rajangam
National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Takeuchi Ken
Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
-
Ken Takeuchi
Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
-
Shigeki Sakai
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Miyaji Kousuke
Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
-
Tanakamaru Shuhei
Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
-
Sakai Shigeki
National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Takahashi Mitsue
National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Takahashi Mitsue
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Horiuchi Takeshi
National Institute of Advanced Industrial Science and Technology
-
Zhang Xizhen
National Engineering Laboratory for AIDS Vaccine, Jilin University
-
Wang Shouyu
National Institute of Advanced Industrial Science and Technology
著作論文
- A Negative Word-Line Voltage Negatively-Incremental Erase Pulse Scheme with $\Delta V_{\text{TH}} = 1/6\Delta V_{\text{ERASE}}$ for Enterprise Solid-State Drive Application Ferroelectric-NAND Flash Memories
- Self-Aligned-Gate Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistors with Long Memory Retention
- Improvement of Read Disturb, Program Disturb and Data Retention by Memory Cell V_ Optimization of Ferroelectric (Fe)-NAND Flash Memories for Highly Reliable and Low Power Enterprise Solid-State Drives (SSDs)
- A 0.5-V Six-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors
- 64kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5V Program and Long Data Retention (Special Issue : Solid State Devices and Materials (2))
- Initialize and Weak-Program Erasing Scheme for High-Performance and High-Reliability Ferroelectric NAND Flash Solid-State Drive
- Pt/SrBi2Ta2O9/Hf-Al-O/Si Field-Effect-Transistor with Long Retention Using Unsaturated Ferroelectric Polarization Switching
- FeCMOS logic inverter circuits with nonvolatile-memory function