FeCMOS logic inverter circuits with nonvolatile-memory function
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概要
- 論文の詳細を見る
Operations of ferroelectric complementary metal-oxide-semiconductor (FeCMOS) circuits, which are composed of ferroelectric-gate field effect transistors (FeFETs) instead of conventional MOS FETs, are demonstrated for the first time. The FeCMOS circuits have a practical value of saving much power consumption by switching the circuit function between logic and distributed nonvolatile memory. The function switching is possible by momentary expanding supplied voltages before cutting the power-supply. We fabricate FeCMOS inverters as representative logic elements and demonstrate the function switching from logic to nonvolatile memory. As the nonvolatile memory, accurate operations of data write, sleep with no supplied voltages and nondestructive read, are verified. The nonvolatility is confirmed by output-voltage retention measurements.
- The Institute of Electronics, Information and Communication Engineersの論文
著者
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Sakai Shigeki
National Inst. Of Advanced Industrial Sci. And Technol.
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Takahashi Mitsue
National Inst. Of Advanced Industrial Sci. And Technol.
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Horiuchi Takeshi
National Institute of Advanced Industrial Science and Technology
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Wang Shouyu
National Institute of Advanced Industrial Science and Technology
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