Endurance Enhancement and High Speed Set/Reset of 50 nm Generation HfO2 Based Resistive Random Access Memory Cell by Intelligent Set/Reset Pulse Shape Optimization and Verify Scheme
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概要
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This paper proposes a verify-programming method for the resistive random access memory (ReRAM) cell which achieves a 50-times higher endurance and a fast set and reset compared with the conventional method. The proposed verify-programming method uses the incremental pulse width with turnback (IPWWT) for the reset and the incremental voltage with turnback (IVWT) for the set. With the combination of IPWWT reset and IVWT set, the endurance-cycle increases from 48 \times 10^{3} to 2444 \times 10^{3} cycles. Furthermore, the measured data retention-time after 20 \times 10^{3} set/reset cycles is estimated to be 10 years. Additionally, the filamentary based physical model is proposed to explain the set/reset failure mechanism with various set/reset pulse shapes. The reset pulse width and set voltage correspond to the width and length of the conductive-filament, respectively. Consequently, since the proposed IPWWT and IVWT recover set and reset failures of ReRAM cells, the endurance-cycles are improved.
- 2012-02-25
著者
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Higuchi Kazuhide
Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Higuchi Kazuhide
Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Takeuchi Ken
Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Miyaji Kousuke
Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Johguchi Koh
Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Miyaji Kousuke
Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Takeuchi Ken
Department of Electrical Engineering and Information Systems, Chuo University, Bunkyo, Tokyo 112-8551, Japan
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