Tungsten Film Chemical Mechanical Polishing Using MnO₂ Slurry

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概要

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• It has been demonstrated that MnO₂ abrasive can polish tungsten films without using an oxidizer solution. The polishing rate of MnO₂ slurry is 1.5 times higher than that of commercially available Al₂O₃ slurry. A W plug is formed without etching holes (keyholes) during chemical mechanical polishing with MnO₂ abrasive slurry. With MnO₂ slurry, no key holes were formed even after overpolishing by an additional 0.6 μm. On the other hand, with conventional Al₂O₃ slurry, keyholes were formed after overlpolishing by an additional 0.4 μm. The residual MnO₂ abrasive on the surface after chemical mechanical polishing was completely removed by the cleaning process because MnO₂ abrasive easily dissolves in a cleaning solution of HCl, H₂O₂, and H₂O. These results indicate that, since MnO₂ is in itself a solid oxidizer, MnO₂ abrasive can polish W films without using an oxidizer solution and does not etch the seam.

• 2011-07-25

著者

• KISHII Sadahiro

  Fujitsu Laboratories Ltd.

• 岸井 貞浩

  (株)富士通研究所

• Doi Toshiro

  Department Of Mechanical Engineering Graduate School Kyushu University

• Kurokawa Syuhei

  Department Of Intelligent Machinery And Systems Kyushu University

• Kishii Sadahiro

  Device Integration Technology Laboratories, Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan

• Hatada Akiyoshi

  Device Integration Technology Laboratories, Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan

• Arimoto Yoshihiro

  Device Integration Technology Laboratories, Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan

• Doi Toshiro

  Department of Education, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan

• Kurokawa Syuhei

  Department of Mechanical Engineering, Kyushu University, Fukuoka 836-0395, Japan

• 岸井 貞浩

  (株) 富士通研究所

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