Effect of Pad Surface Roughness on SiO2 Removal Rate in Chemical Mechanical Polishing with Ceria Slurry
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概要
- 論文の詳細を見る
The effect of pad surface roughness on SiO2 removal rate was investigated using four different slurries containing ceria (CeO2) powders of different crystallite sizes and mean particle sizes. A clear maximum was observed in the dependence of removal rate on pad surface roughness. The four ceria slurries showed a peak in blanket wafer removal rate against pad surface roughness $R_{\text{a}}$. The peak moved toward larger $R_{\text{a}}$ values with decreasing ceria crystallite size. The removal rate was strongly influenced not only by pad surface roughness but also by the crystallite size of ceria in the slurry.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-02-15
著者
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Ashizawa Toranosuke
Semiconductor Materials Division, Hitachi Chemical Co., Ltd., 4-13-1 Higashi, Hitachi, Ibaraki 317-8555, Japan
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Yoshida Masato
Electronic Materials R&D Center, Hitachi Chemical Co., Ltd., 1380-1 Nishihara, Tarasaki, Hitachi-Naka, Ibaraki 312-0003, Japan
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Doi Toshiro
Department of Education, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
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Nishiyama Masaya
Semiconductor Materials Division, Hitachi Chemical Co., Ltd., 4-13-1 Higashi, Hitachi, Ibaraki 317-8555, Japan
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Ono Hiroshi
Electronic Materials R&D Center, Hitachi Chemical Co., Ltd., 1380-1 Nishihara, Tarasaki, Hitachi-Naka, Ibaraki 312-0003, Japan
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