Effect of Zinc Oxide Film Deposition Position on the Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Low-Temperature Magnetron Sputtering
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概要
- 論文の詳細を見る
We report on the effect of zinc oxide (ZnO) film deposition position on the characteristics of ZnO thin-film transistors (TFTs) fabricated by magnetron sputtering with no intentional heating of the substrate. We evaluate the properties of ZnO (channel semiconductor) films deposited at various positions with respect to the target position. We show that the film deposition at a position off-centered from the target results in good TFT characteristics. This might be due to the fact that the off-centered deposition position is effective for suppressing the effect of energetic negative ions in the plasma.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-09-25
著者
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TAKECHI Kazushige
Technology Research Association for Advanced Display Materials (TRADIM)
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OTSUKI Shigeyoshi
Technology Research Association for Advanced Display Materials (TRADIM)
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Yamaguchi Hirotaka
Nec Lcd Technologies Ltd.
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Kaneko Setsuo
Nec Lcd Technologies Ltd.
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Nakata Mitsuru
Technology Research Association For Advanced Display Materials (tradim)
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EGUCHI Toshimasa
Technology Research Association for Advanced Display Materials (TRADIM)
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Otsuki Shigeyoshi
Technology Research Association for Advanced Display Materials (TRADIM), Koganei, Tokyo 184-0012, Japan
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- Effect of Zinc Oxide Film Deposition Position on the Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Low-Temperature Magnetron Sputtering
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