OTSUKI Shigeyoshi | Technology Research Association for Advanced Display Materials (TRADIM)
スポンサーリンク
概要
関連著者
-
TAKECHI Kazushige
Technology Research Association for Advanced Display Materials (TRADIM)
-
OTSUKI Shigeyoshi
Technology Research Association for Advanced Display Materials (TRADIM)
-
KANOH Hiroshi
SOG Research Laboratories, NEC Corp.
-
NAKATA Mitsuru
SOG Research Laboratories, NEC Corp.
-
KANEKO Setsuo
SOG Research Laboratories, NEC Corp.
-
Kanoh Hiroshi
Technology Research Association For Advanced Display Materials (tradim)
-
Yamaguchi Hirotaka
Nec Lcd Technologies Ltd.
-
Kaneko Setsuo
Nec Lcd Technologies Ltd.
-
Nakata Mitsuru
Technology Research Association For Advanced Display Materials (tradim)
-
EGUCHI Toshimasa
Technology Research Association for Advanced Display Materials (TRADIM)
-
Kanoh Hiroshi
SOG Research Laboratories, NEC Corp., 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
-
Kanoh Hiroshi
SOG Research Laboratories, NEC Corp., 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
-
Nakata Mitsuru
SOG Research Laboratories, NEC Corp., 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
-
Kaneko Setsuo
SOG Research Laboratories, NEC Corp., 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
-
Otsuki Shigeyoshi
Technology Research Association for Advanced Display Materials (TRADIM), 24-16 Nakamachi 2-chome, Koganei, Tokyo 184-0012, Japan
-
Otsuki Shigeyoshi
Technology Research Association for Advanced Display Materials (TRADIM), Koganei, Tokyo 184-0012, Japan
-
Takechi Kazushige
Technology Research Association for Advanced Display Materials (TRADIM), 24-16 Nakamachi 2-chome, Koganei, Tokyo 184-0012, Japan
著作論文
- Quasi-Static Capacitance-Voltage Characteristics of Polycrystalline Silicon Thin-Film Transistors
- Very High Rate and Uniform Glass Etching with HF/HCl Spray for Transferring Thin-Film Transistor Arrays to Flexible Substrates
- Quasi-Static Capacitance–Voltage Characteristics of Polycrystalline Silicon Thin-Film Transistors
- Effect of Zinc Oxide Film Deposition Position on the Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Low-Temperature Magnetron Sputtering