Quasi-Static Capacitance–Voltage Characteristics of Polycrystalline Silicon Thin-Film Transistors
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概要
- 論文の詳細を見る
We have investigated the quasi-static capacitance–voltage (QSCV) characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs), focusing on how the integration time for the capacitance measurement affects the QSCV curves. We have found that the response time of the carriers in the OFF state of the TFTs can be estimated from the QSCV results. QSCV measurements with external illumination enable us to estimate the surface depletion capacitance of TFTs. We have also found that the QSCV characteristics vary with the channel length of TFTs, indicating that the channel length dependence must be taken into account when making a model of TFT capacitance in the OFF state.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-09-15
著者
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TAKECHI Kazushige
Technology Research Association for Advanced Display Materials (TRADIM)
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NAKATA Mitsuru
SOG Research Laboratories, NEC Corp.
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KANOH Hiroshi
SOG Research Laboratories, NEC Corp.
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OTSUKI Shigeyoshi
Technology Research Association for Advanced Display Materials (TRADIM)
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KANEKO Setsuo
SOG Research Laboratories, NEC Corp.
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Kanoh Hiroshi
SOG Research Laboratories, NEC Corp., 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Nakata Mitsuru
SOG Research Laboratories, NEC Corp., 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Kaneko Setsuo
SOG Research Laboratories, NEC Corp., 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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