Kaneko Setsuo | Nec Lcd Technologies Ltd.
スポンサーリンク
概要
関連著者
-
TAKECHI Kazushige
Technology Research Association for Advanced Display Materials (TRADIM)
-
Yamaguchi Hirotaka
Nec Lcd Technologies Ltd.
-
Kaneko Setsuo
Nec Lcd Technologies Ltd.
-
Nakata Mitsuru
Technology Research Association For Advanced Display Materials (tradim)
-
EGUCHI Toshimasa
Technology Research Association for Advanced Display Materials (TRADIM)
-
Tokumitsu Eisuke
Tokyo Institute Of Technology
-
Tokumitsu Eisuke
Tokyo Institute of Technology, Yokohama 226-8503, Japan
-
OTSUKI Shigeyoshi
Technology Research Association for Advanced Display Materials (TRADIM)
-
Azuma Kazufumi
Technology Research Association For Advanced Display Materials (tradim)
-
Nakata Mitsuru
Technology Research Association for Advanced Display Materials (TRADIM), Koganei, Tokyo 184-0012, Japan
-
Kaneko Setsuo
NEC LCD Technologies, Ltd., Kawasaki 211-8666, Japan
-
Takechi Kazushige
Technology Research Association for Advanced Display Materials (TRADIM), Koganei, Tokyo 184-0012, Japan
-
Yamaguchi Hirotaka
NEC LCD Technologies, Ltd., Kawasaki 211-8666, Japan
-
Yamaguchi Shinya
Technology Research Association for Advanced Display Materials (TRADIM), Koganei, Tokyo 184-0012, Japan
-
Otsuki Shigeyoshi
Technology Research Association for Advanced Display Materials (TRADIM), Koganei, Tokyo 184-0012, Japan
著作論文
- Improvement of InGaZnO_4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing
- Effects of Excimer Laser Annealing on InGaZnO4 Thin-Film Transistors Having Different Active-Layer Thicknesses Compared with Those on Polycrystalline Silicon
- Flexible High-Performance Amorphous InGaZnO4 Thin-Film Transistors Utilizing Excimer Laser Annealing
- Study on Current Crowding in the Output Characteristics of Amorphous InGaZnO4 Thin-Film Transistors Using Dual-Gate Structures with Various Active-Layer Thicknesses
- Application of the Meyer–Neldel Rule to the Subthreshold Characteristics of Amorphous InGaZnO4 Thin-Film Transistors
- Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO4 Thin-Film Transistors
- Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4 Thin-Film Transistors
- Effects of Thermal Annealing on ZnO Thin-Film Transistor Characteristics and the Application of Excimer Laser Annealing in Plastic-Based ZnO Thin-Film Transistors
- Effect of Zinc Oxide Film Deposition Position on the Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Low-Temperature Magnetron Sputtering