Improvement of InGaZnO_4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing

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2009-02-25

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Quasi-Static Capacitance-Voltage Characteristics of Polycrystalline Silicon Thin-Film Transistors
Very High Rate and Uniform Glass Etching with HF/HCl Spray for Transferring Thin-Film Transistor Arrays to Flexible Substrates
Improvement of InGaZnO_4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing
Effects of Excimer Laser Annealing on InGaZnO4 Thin-Film Transistors Having Different Active-Layer Thicknesses Compared with Those on Polycrystalline Silicon
Flexible High-Performance Amorphous InGaZnO4 Thin-Film Transistors Utilizing Excimer Laser Annealing
Study on Current Crowding in the Output Characteristics of Amorphous InGaZnO4 Thin-Film Transistors Using Dual-Gate Structures with Various Active-Layer Thicknesses
Application of the Meyer–Neldel Rule to the Subthreshold Characteristics of Amorphous InGaZnO4 Thin-Film Transistors
Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO4 Thin-Film Transistors
Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4 Thin-Film Transistors
Very High Rate and Uniform Glass Etching with HF/HCl Spray for Transferring Thin-Film Transistor Arrays to Flexible Substrates
Quasi-Static Capacitance–Voltage Characteristics of Polycrystalline Silicon Thin-Film Transistors
Effects of Thermal Annealing on ZnO Thin-Film Transistor Characteristics and the Application of Excimer Laser Annealing in Plastic-Based ZnO Thin-Film Transistors
Effect of Zinc Oxide Film Deposition Position on the Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Low-Temperature Magnetron Sputtering
Forward Transfer of Thin-Film Devices to Flexible Substrates by Applying Thermal Stress

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