Very High Rate and Uniform Glass Etching with HF/HCl Spray for Transferring Thin-Film Transistor Arrays to Flexible Substrates
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-07-15
著者
-
Kanoh Hiroshi
Technology Research Association For Advanced Display Materials (tradim)
-
TAKECHI Kazushige
Technology Research Association for Advanced Display Materials (TRADIM)
-
OTSUKI Shigeyoshi
SOG Research Laboratories, NEC Corp.
関連論文
- Quasi-Static Capacitance-Voltage Characteristics of Polycrystalline Silicon Thin-Film Transistors
- Very High Rate and Uniform Glass Etching with HF/HCl Spray for Transferring Thin-Film Transistor Arrays to Flexible Substrates
- Improvement of InGaZnO_4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing
- Effects of Excimer Laser Annealing on InGaZnO4 Thin-Film Transistors Having Different Active-Layer Thicknesses Compared with Those on Polycrystalline Silicon
- Flexible High-Performance Amorphous InGaZnO4 Thin-Film Transistors Utilizing Excimer Laser Annealing
- Study on Current Crowding in the Output Characteristics of Amorphous InGaZnO4 Thin-Film Transistors Using Dual-Gate Structures with Various Active-Layer Thicknesses
- Application of the Meyer–Neldel Rule to the Subthreshold Characteristics of Amorphous InGaZnO4 Thin-Film Transistors
- Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO4 Thin-Film Transistors
- Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4 Thin-Film Transistors
- Very High Rate and Uniform Glass Etching with HF/HCl Spray for Transferring Thin-Film Transistor Arrays to Flexible Substrates
- Quasi-Static Capacitance–Voltage Characteristics of Polycrystalline Silicon Thin-Film Transistors
- Effects of Thermal Annealing on ZnO Thin-Film Transistor Characteristics and the Application of Excimer Laser Annealing in Plastic-Based ZnO Thin-Film Transistors
- Effect of Zinc Oxide Film Deposition Position on the Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Low-Temperature Magnetron Sputtering
- Forward Transfer of Thin-Film Devices to Flexible Substrates by Applying Thermal Stress