Application of the Meyer–Neldel Rule to the Subthreshold Characteristics of Amorphous InGaZnO4 Thin-Film Transistors
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概要
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We show that an exponential tail-state distribution model combined with the Meyer–Neldel rule can be used to describe the subthreshold characteristics of amorphous InGaZnO4 thin-film transistors (a-IGZO TFTs). Incorporating temperature-dependent experimental data into the model, we estimate the density of tail states at the conduction-band mobility edge for a-IGZO to be approximately $1.3\times 10^{19}$ cm-3 eV-1, which is one order of magnitude lower than that estimated for hydrogenated amorphous Si (a-Si:H).
- 2009-07-25
著者
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TAKECHI Kazushige
Technology Research Association for Advanced Display Materials (TRADIM)
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Yamaguchi Hirotaka
Nec Lcd Technologies Ltd.
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Kaneko Setsuo
Nec Lcd Technologies Ltd.
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Nakata Mitsuru
Technology Research Association For Advanced Display Materials (tradim)
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EGUCHI Toshimasa
Technology Research Association for Advanced Display Materials (TRADIM)
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